| PART |
Description |
Maker |
| IS61SF12832-10TQ IS61SF12832-10TQI IS61SF12832-8.5 |
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 8 ns, PBGA119
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85 128K X 32 CACHE SRAM, 8 ns, PQFP100
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 10 ns, PBGA119
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 32 CACHE SRAM, 10 ns, PQFP100
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 12 ns, PQFP100
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 32 CACHE SRAM, 7.5 ns, PQFP100
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| IS61SP12836 |
128K x 36 Synchronous Pipelined SRAM(128K x 36 同步流水线静态RAM) 128K的同步流水线× 36的SRAM28K的36同步流水线静态内存）
|
Integrated Silicon Solution, Inc.
|
| IS61LF12832A IS61LF12832A-6.5B2 IS61LF12832A-6.5B3 |
128K X 32, 128K X 36, 256K X 18 4 MB SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS61LF25618A-7.5TQLI |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
Integrated Silicon Solu...
|
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT70V7599S IDT70V7599S-133BCI IDT70V7599S-133BFI |
128K x 36 Synchronous Bank-Switchable Dual-Port SRAM
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V28K的36 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
|
IDT
Integrated Device Technology, Inc.
|
| AS7C3128PFS36A AS7C3128PFS32 AS7C3128PFS36A-4TQC A |
128K x 36 synchronous SRAM, 133 MHz
128K x 36 synchronous SRAM, 150 MHz
128K x 36 synchronous SRAM, 166 MHz
128K x 32 synchronous SRAM, 100 MHz
128K x 32 synchronous SRAM, 133 MHz
128K x 32 synchronous SRAM, 150 MHz
128K x 32 synchronous SRAM, 166 MHz
128K X 32 STANDARD SRAM, 5 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STANDARD SRAM, 5 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STANDARD SRAM, 3.8 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 3.8 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 3.5 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STANDARD SRAM, 3.5 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K x 32/36 synchronous SRAM
|
Alliance Semiconductor, Corp.
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
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